EFFECT OF OXYGEN RATIO ON THE STRUCTURE, OPTICAL  AND ELECTRICAL PROPERTIES OF NiO THIN FILMS

Phạm Việt Tùng; Nguyễn Đăng Tuyên; Đoàn Quảng Trị; Dương Thanh Tùng; Nguyễn Duy Cường

doi:10.34238/tnu-jst.7940

EFFECT OF OXYGEN RATIO ON THE STRUCTURE, OPTICAL AND ELECTRICAL PROPERTIES OF NiO THIN FILMS

About this article

Received: 15/05/23 Revised: 03/07/23 Published: 03/07/23

Authors

1. Pham Viet Tung, Hanoi University of Science and Technology
2. Nguyen Dang Tuyen, Hanoi University of Science and Technology
3. Doan Quang Tri, Hanoi University of Science and Technology
4. Duong Thanh Tung, Hanoi University of Science and Technology
5. Nguyen Duy Cuong , Hanoi University of Science and Technology

Abstract

Nickel oxide thin films have potential applications in various fields, particularly photovoltaics. In this study, nickel oxide thin films were deposited on glass substrates by the sputtering method at 100 °C with varying oxygen ratios (O₂/(Ar+O₂) x100%). When the oxygen ratio was changed from 30% to 70%, the film’s structural, optical, and electrical properties were affected significantly. As the oxygen concentration increased, the crystallinity decreased, and the films became nearly amorphous at an oxygen concentration of 70%; the size of the crystalline particles decreased gradually. All NiO films deposited in the range of 30-70% oxygen had p-type semiconductor properties. The carrier mobility of the NiO films was relatively high, ranging from 5.384 x 10¹⁹ - 4.339 x 10²¹ cm^-3, suitable for hole transport applications. These results suggest that nickel oxide thin films have potential applications in optoelectronic devices, particularly in next-generation thin-film solar cells.

Keywords

NiO thin film; Sputtering; P-type semiconductor; Carrier concentration; Oxygen ratio

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DOI: https://doi.org/10.34238/tnu-jst.7940

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