FIRST-PRINCIPLES STUDY OF THE THERMOELECTRIC PROPERTIES OF TWO-DIMENSIONAL MATERIALS SiSX (X = 1, 2) | Quang | TNU Journal of Science and Technology

FIRST-PRINCIPLES STUDY OF THE THERMOELECTRIC PROPERTIES OF TWO-DIMENSIONAL MATERIALS SiSX (X = 1, 2)

About this article

Received: 04/06/25                Revised: 06/11/25                Published: 07/11/25

Authors

1. Tran The Quang Email to author, Thai Binh University, Viet Nam
2. Nguyen Hoang Linh, 1) Changwon National University, Republic of Korea, 2) Korea Institute of Ceramic Engineering and Technology, Republic of Korea
3. Dinh The Hung, Phenikaa School of Engineering - Phenikaa University, Vietnam
4. Le Nhat Bang, Thai Binh University, Viet Nam
5. Do Van Truong, School of Mechanical Engineering - Hanoi University of Science and Technology, Vietnam

Abstract


In this study, density functional theory, combined with the Quantum ESPRESSO simulation package, was employed to investigate the thermoelectric properties of two-dimensional materials SiS and SiS₂. The results show that the Seebeck coefficient of SiS reaches its optimal value at T = 400 K, while that of SiS₂ is maximized at T = 300 K. This indicates that both materials exhibit great potential for converting thermal energy into electrical energy. Specifically, the Seebeck coefficient of SiS is 2.53 mV/K, which is higher than that of SiS₂ at 2.22 mV/K. The electronic thermal conductivity of SiS is 8.39×10¹⁴ W/mK, significantly higher than that of SiS₂, which is 1.42×10¹⁴ W/mK. In addition, other characteristic parameters such as electrical conductivity and power factor were also analyzed to provide a more comprehensive evaluation of the thermoelectric performance of SiS and SiS₂. These findings not only shed light on the thermoelectric characteristics of two-dimensional SiS and SiS₂ but also suggest promising applications of these materials in advanced energy technologies.

Keywords


Thermoelectric properties; Density Functional Theory; Seebeck coefficient; 2D materials; Thermoelectric materials

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References


[1] J. Kim, H. Chang, G. Bae, M. Choi, and S. Jeon, “Graphene-based thermoelectric materials: toward sustainable energy-harvesting systems,” Chemical Communications, vol. 61, no. 27, pp. 5050-5063, 2025.

[2] S.-H. Yang, S. Murugan, C. Sivakumar, Y.-C. Hsu, B. Balraj, J.-H. Tsia, M.-H. Chen, and M.-S. Ho, “Exploring the frontier of 2D materials: Strain and electric field effects in MoS2/WS2 vdW heterostructures,” Journal of Alloys and Compounds, vol. 1012, 2025, Art. no. 178457.

[3] A. Suhail and I. Lahiri, "Two‐Dimensional Hexagonal Boron Nitride and Borophenes," in Layered 2D Advanced Materials and Their Allied Applications, Scrivener Publishing LLC, 2020, pp. 303-336.

[4] S. Ali, P. M. Ismail, M. Humayun, and M. Bououdina, “Hexagonal boron nitride: From fundamentals to applications,” Desalination, vol. 599, 2025, Art. no. 118442.

[5] A. Bhat, S. Anwer, K. S. Bhat, M. I. H. Mohideen, K. Liao, and A. Qurashi, “Prospects challenges and stability of 2D MXenes for clean energy conversion and storage applications,” npj 2D Materials and Applications, vol. 5, no. 1, pp. 1-21, 2021.

[6] C. Kuila, A. Maji, N. C. Murmu, and T. Kuila, “Hexagonal boron nitride (h-BN) “a miracle in white”: An emerging two-dimensional material for the advanced powered electronics and energy harvesting application,” Composites Part B: Engineering, vol. 301, 2025, Art. no. 112531.

[7] S. Ullah, H. Din, S. Ahmad, Q. Alam, S. Sardar, B. Amin, M. Farooq, C. Q. Nguyen, and C. V. Nguyen, “Theoretical prediction of the electronic structure, optical properties and photocatalytic performance of type-I SiS/GeC and type-II SiS/ZnO heterostructures,” RSC Advances, vol. 13, no. 7, pp. 7436-7442, 2023.

[8] Q. Alam, S. Muhammad, M. Idrees, N. V. Hieu, N. T. Binh, C. Nguyen, and B. Amin, “First-principles study of the electronic structures and optical and photocatalytic performances of van der Waals heterostructures of SiS, P and SiC monolayers,” RSC Advances, vol. 11, no. 8, pp. 14263-14268, 2021.

[9] Y. Guan, X. Li, R. Niu, N. Zhang, T. Hu, and L. Zhang, “Tunable electronic properties of type-II SiS2/WSe2 hetero-bilayers,” Nanomaterials, vol. 10, no. 9, 2020, Art. no. 2037.

[10] P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, and I. Dabo, “QUANTUM ESPRESSO: a modular and open-source software project for quantumsimulations of materials,” Journal of Physics: Condensed Matter, vol. 21, no. 10, 2009, Art. no. 395502.

[11] H. L. Nguyen, M. S. Nguyen, T. Q. Tran, T. T. To, V. T. Vuong, T. H. Dinh, and V. T. Do, "Physico‒mechanical Properties and Carrier Mobility of HfS2 Monolayer," in Advances in Engineering Research and Application, Springer Nature Switzerland AG, 2024, pp. 20-26.

[12] H. J. Monkhorst and J. D. Pack, “Special points for Brillouin-zone integrations,” Physical review B, vol. 13, no. 12, 1976, Art. no. 5188.

[13] T. H. Dinh, H. L. Nguyen, V. T. Do, and T. Q. Tran, “Investigation electromechanical properties of material WSe2 monolayer,” Transport Magazine, vol. 64, no. 746, pp. 107-109, 2024.

[14] T. Q. Tran, H. L. Nguyen, T. H. Dinh, Q. V. Pham, T. K. Nguyen, and V. T. Do, “Calculation mechanical, electronic and piezoelectric properties of monolayer sis material using density functional theory,” Transport and Communications Science Journal, vol. 75, no. 14, pp. 2264-2277, 2024.

[15] E. H. Hasdeo, L. Krisna, M. Y. Hanna, B. E. Gunara, N. T. Hung, and A. R. Nugraha, “Optimal band gap for improved thermoelectric performance of two-dimensional Dirac materials,” Journal of Applied Physics, vol. 126, no. 3, 2019, Art. no. 035109.

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DOI: https://doi.org/10.34238/tnu-jst.12979

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