THE SUPPRESSION OF ISLAND FORMATION FOR GERMANIUM GROWTH ON SILICON SUBSTRATE BY MOLECULAR BEAM EPITAXY SYSTEM

Abstract

In recent years, Silicon-based integrated devices for optoelectronic integration have attracted wide attention. Epitaxial Ge film on Si substrate has become a significant material due to its narrow pseudo-indirect gap behavior, which is compatible with silicon technology. However, remain a major challenge to achieve a good quality Ge eplilayers on Si because of high lattice mismatch between Ge and Si (4.2%). In this paper, we present a high quality Ge film on Si (001) with low threading dislocation densities, which was obtained by two step growth process following by rapid thermal annealing (at 900^oC in 3 min) using molecular beam epitaxy system. This result contributes to realization of Ge-on-Si devices for optoelectronic applications.