INFLUENCE OF THE ELECTRONIC MOBILITY ON THE EXCITONIC INSULATOR STATE IN RARE-EARTH CHALCOGENIDES

Nguyễn Thị Hậu; Lê Tiến Hà; Đỗ Thị Hồng Hải

doi:10.34238/tnu-jst.5132

INFLUENCE OF THE ELECTRONIC MOBILITY ON THE EXCITONIC INSULATOR STATE IN RARE-EARTH CHALCOGENIDES

About this article

Received: 08/10/21 Revised: 09/11/21 Published: 10/11/21

Authors

1. Nguyen Thi Hau, Hanoi University of Mining and Geology
2. Le Tien Ha, TNU – University of Sciences
3. Do Thi Hong Hai , Hanoi University of Mining and Geology

Abstract

The influence of the electronic mobility on the excitonic insulator state in the rare-earth chalcogenides was investigated through the extended Falicov–Kimball model. By applying the Hartree-Fock approximation, we have obtained a set of self-consistent equations determining expectation values and the excitonic susceptibility function in the model. We have considered the effect of the electronic mobility on the excitonic insulator state via analyzing the excitonic susceptibility function. The results confirm the role of the f-electron mobility in the formation of the excitonic insulator state in rare-earth chalcogenides at sufficiently low temperature when the external pressure is large enough.

Keywords

The extended Falicov–Kimball model; Hartree-Fock approximation; Excitonic insulator; The rare-earth chalcogenide; Excitonic susceptibility

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DOI: https://doi.org/10.34238/tnu-jst.5132

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