EFFECT OF ANNEALING TEMPERATURE ON STRUCTURE  AND LUMINESCENCE PROPERTIES OF Ga2O3:Cr3+ MATERIALS

Vũ Thị Kim Thoa; Nguyễn Văn Quang; Nguyễn Mai Anh; Đàm Quang Học

doi:10.34238/tnu-jst.5831

EFFECT OF ANNEALING TEMPERATURE ON STRUCTURE AND LUMINESCENCE PROPERTIES OF Ga2O3:Cr3+ MATERIALS

About this article

Received: 08/04/22 Revised: 23/05/22 Published: 25/05/22

Authors

1. Vu Thi Kim Thoa , Ha Noi Pedagogical University No 2
2. Nguyen Van Quang, Ha Noi Pedagogical University No 2
3. Nguyen Mai Anh, Ha Noi Pedagogical University No 2
4. Dam Quang Hoc, Ha Noi Pedagogical University No 2

Abstract

In this work, Far-red emitting Ga₂O₃:Cr³⁺ materials were synthesized by the heat diffusion method. The effects of temperature sintered to phase structure and luminescence properties of the phosphors were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and steady-state photoluminescence (PL). XRD showed that the crystallinity of β –Ga₂O₃:Cr³⁺ phosphor belongs to the Monoclinic with C2/m space group. Photoluminescence excitation (PLE) spectrum shows that obtained phosphor could strongly absorb with two broads at 380 ÷ 500 nm and 520 ÷ >610 nm. Broad photoluminescence (PL) excitation bands at ∼600 ÷ 850nm were observed whose intensity increased with the annealing temperature. A far-red LED prototype is obtained by coating the optimum powder on a blue LED chip (450nm). These results showed that β –Ga₂O₃:Cr³⁺ phosphor has the potential to produce far-red LEDs lighting for plants.

Keywords

Ga2O3:Cr3+; Far-red emitting; Diffusion method; Far Red LED; Agricultural LED Lighting

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DOI: https://doi.org/10.34238/tnu-jst.5831

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