ENHANCEMENT OF PERPENDICULAR EXCHANGE BIAS IN [Co/Pd]/IrMn SYSTEM BY ULTRATHIN CoFe INSERTION LAYER | Thủy | TNU Journal of Science and Technology

ENHANCEMENT OF PERPENDICULAR EXCHANGE BIAS IN [Co/Pd]/IrMn SYSTEM BY ULTRATHIN CoFe INSERTION LAYER

About this article

Received: 11/05/20                Revised: 30/05/20                Published: 31/05/20

Authors

1. Nguyen Thi Thanh Thuy, Hanoi National University of Education
2. Cao Thi Thanh Hai, Hanoi National University of Education
3. Nguyen Thi Hue, Hanoi National University of Education
4. Dinh Hung Manh, Hanoi National University of Education
5. Vu Hong Ky, Institute of Materials Science – VAST
6. Do Khanh Tung, Institute of Materials Science – VAST
7. Nguyen Thanh Huong, Institute of Materials Science – VAST
8. Nguyen Thi Ngoc Anh Email to author, Institute of Materials Science – VAST, Graduate University of Science and Technology - VAST

Abstract


In this study, we investiged the effect of an ultrathin CoFe insertion layer on perpendicular exchange bias in the [Co/Pd]/IrMn systems. These multilayers were deposited by magnetron sputtering. The structural and magnetic properties of the deposited multilayers were examined by X-ray diffractometer and Vibration sample magnetometer. The experimental results showed that the value of the perpendicular exchange bias field (HEB) of [Co/Pd]/IrMn multilayers at room temperature is relatively high (HEB ~ 98 Oe). However, HEB is significantly enhanced when an ultrathin layer of CoFe (tCoFe = 0.3 – 1.2 nm) is inserted between the [Co/Pd] ferromagnetic multilayers and the IrMn antiferromagnetic layer. The highest value of HEB is 205 Oe with tCoFe = 0.8 nm which is more than twice higher than that of the system without CoFe insertion layer.


Keywords


Magnetic materials; magnetic multilayers; perpendicular magnetic anisotropy; exchange bias effect; ferromagnetic/antiferromagnetic exchange interaction

References


[1]. W. H. Meiklejohn, and C. P. Bean, “New Magnetic Anisotropy,” Phys. Rev., vol. 102, no. 5, p. 1413, 1956.

[2]. W. H. Meiklejohn, and C. P. Bean, “New Magnetic Anisotropy,” Phys. Rev., vol. 105, no. 3, p. 904, 1957.

[3]. C. Leighton, J. Nogués, B. J. Jönsson-Åkerman, and I. K. Schuller, “Coercivity Enhancement in Exchange Biased Systems Driven by Interfacial Magnetic Frustration,” Phys. Rev. Lett., vol. 84, no. 15, p. 3466, 2000.

[4]. D. Schafer, P. L. Grande, L. G. Pereira, G. M. Azevedo, A. Harres, M. A. de Sousa, F. Pelegrini, and J. Geshev, “Antiparallel interface coupling evidenced by negative rotatable anisotropy in IrMn/NiFe bilayers,” J. Appl. Phys., vol. 117, no. 21, p. 215301, 2015.

[5]. A. E. Berkowitz, and K. Takano, “Exchange anisotropy-a review,” J. Magn. Magn. Mater., vol. 200, no. 1-3, pp. 552-570, 1999.

[6]. S. Giri, M. Patra, and S. Majumdar, “Exchange bias effect in alloys and compounds,” J. Phys.: Condens. Matter., vol. 23, p. 07321, 2011

[7]. S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O’Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Y. Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, and W. J. Gallagher, “Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory,” J. Appl. Phys., vol. 85, no. 8, pp. 5828-5833, 1999.

[8]. P. P. Freitas, R. Ferreira, S. Cardoso, and F. Cardoso, “Magnetoresistive sensors,” J. Phys.: Condens. Matter., vol. 19, no. 16, p. 165221, 2007.

[9]. B. Tudu, and A. Tiwari, “Recent Developments in Perpendicular Magnetic Anisotropy Thin Films for Data Storage Applications,” Vacuum, vol. 146, pp. 329-341, 2017.

[10]. R. Sbiaa, H. Meng, and S. N. Piramanayagam, “Materials with perpendicular magnetic anisotropy for magnetic random access memory,” Phys. Stat. Sol. RRL, vol. 5, no. 12, pp. 413-419, 2011.

[11]. S. Yanlin, and Z. Daoben (Eds.), High density data storage: Principle, Technology, and Materials, World Scientific, 2009.

[12]. K. Mohri, Y. Honkura, L. Panina, and T. Uchiyama, “Super MI sensor: recent advances of amorphous wire and CMOS-IC magneto-impedance sensor,” J. Nanosci. Nanotech., vol. 12, no. 9, pp. 7491-7495, 2012.

[13]. A. V. Kimel, A. Kirilyuk, P. A. Usachev, R. V. Pisarev, A.M. Balbashov, and T. Rasing, “Ultrafast non-thermal control of magnetization by instantaneous photomagnetic pulses,” Nature, vol. 435, pp. 655-657, (2005).

[14]. T. Satoh, S.-J. Cho, R. Iida, T. Shimura, K. Kuroda, H. Ueda, Y. Ueda, B. A. Ivanov, F. Nori, and M. Fiebig, “Spin Oscillations in Antiferromagnetic NiO Triggered by Circularly Polarized Light,” Phys. Rev. Lett., vol. 105, p. 077402, 2010.

[15]. S. Wienholdt, D. Hinzke, and U. Nowak, “THz Switching of Antiferromagnets and Ferrimagnets,” Phys. Rev. Lett., vol. 108, p. 247207, 2012.

[16]. A. Mougin, S. Mangin, J.-F. Bobo, and A. Loidl, “New Trends in Magnetic Exchange Bias,” Eur. Phys. J. B, vol. 45, p. 155, 2005

[17]. F. Garcia, J. Sort, B. Rodmacq, S. Auffret, and B. Dieny, “Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers,” Appl. Phys. Lett., vol. 83, no. 17, p. 3537, 2003.

[18]. S. van. Dijken, J. Moritz, and J. M. D. Coey, “Correlation between perpendicular exchange bias and magnetic anisotropy in IrMn/[Co∕Pt]n and [Pt∕Co]n/IrMn multilayers,” J. Appl. Phys., vol. 97, no. 6, p. 063907, 2005.

[19]. P. F. Carcia, “Perpendicular magnetic anisotropy in Pd/Co and Pt/Co thin-film layered structures,” J. App. Phys., vol. 63, no. 10, p. 5066, 1988.

[20]. C. W. Barton, and T. Thomson, “Magnetisation reversal in anisotropy graded Co/Pd multilayers,” J. Appl. Phys., vol. 118, no. 6, p. 063901, 2015.

[21]. C. P. Li, Nanofabrication, nanomagnetism and other applications of nanostructures. Diss. UC San Diego, 2007.

[22]. N. T. Hue, N. T. T. Thuy, C. T. T. Hai, D. H. Manh, D. H. Manh , V. D. Lam, N. V. Dang, and N. T. N. Anh, “Tunable perpendicular exchange bias and coercivity in [Co/Pd]/IrMn multilayers,” TNU - J. Sci. Tech., vol. 200, no. 7, pp. 141-148, 2019.

[23]. Y. F. Liu, J. W. Cai, and S. L. He, “Large perpendicular exchange bias in IrMn/CoFe/[Pt/Co] multilayers grown on a Ta/Pt buffer layer,” J. Phys. D: Appl. Phys., vol. 42, no. 11, p. 115002, 2009.

[24]. L. Lin, S. Kim, and S. Bae, “Effects of Co80Fe20 insertion layer on perpendicular exchange bias characteristics in [Pd/Co]5/FeMn bilayered thin films,” J. Phys., vol. 101, no. 9, p. 09066, 2007.

[25]. G. Anderson, Y. Huai, and L. Miloslawsky, “CoFe/IrMn exchange biased top, bottom, and dual spin valves,” J. App. Phys., vol. 87, no. 9, p. 6989, 2000.

[26]. R. Law, R. Sbiaa, T. Liew, and T. C. Chong, “Effects of Ta seed layer and annealing on magnetoresistance in CoFePd-based pseudo-spin-valves with perpendicular anisotropy,” Appl. Phys. Lett., vol. 91, no. 24, p. 242504, 2007.

[27]. T. Tahmasebi, S. N. Piramanayagam, R. Sbiaa, R. Law, and T. C. Chong, “Effect of different seed layers on magnetic and transport properties of perpendicular anisotropic spin valves,” IEEE Trans. Magn., vol. 46, no. 6, p. 1933, 2010.

[28]. H. Nemoto, H. Nakagawa, and Y. Hosoe, “Dependence of Co/Pd Superlattice Properties on Pd Layer Thickness,” IEEE Trans. Magn., vol. 39, no. 5, pp. 2714-2716, 2003.

[29]. H. J. Zhang, S. Yamamoto, Y. Fukaya, M. Maekawa, H. Li, A. Kawasuso, T. Seki, E. Saitoh, and K. Takanashi, “Current-induced spin polarization on metal surfaces probed by spin-polarized positron beam,” Sci. Rep., vol. 4, p. 4844, 2014.

[30]. M. Fecioru-Morariu, G. Guntherodt, M. Ruhrig, A. Lamperti, and B. Tanner, “Exchange coupling between an amorphous ferromagnet and a crystalline antiferromagnet,” J. Appl. Phys., vol. 102, no. 5, p. 053911, 2007.

[31]. I. L. Castro, V. P. Nascimento, E. C. Passamani, A.Y. Takeuchi, C. Larica, M. Tafur, and F. Pelegrini, “The role of the (111) texture on the exchange bias and interlayer coupling effects observed in sputtered NiFe/IrMn/Co trilayers,” J. Appl. Phys., vol. 113, no. 20, p. 203903, 2013.

[32]. J. Nogués, and I. K. Schuller, “Exchange bias,” J. Magn. Magn. Mater., vol. 192, pp. 203-232, 1999.

[33]. D.-T. Ngo, Z. L. Meng, T. Tahmasebi, X. Yu, E. Thoeng, L. H. Yeo, A. Rusydi, G. C. Han, and K.-L. Teo, “Interfacial tuning of perpendicular magnetic anisotropy and spin magnetic moment in CoFe/Pd multilayers,” J. Magn. Magn. Mater., vol. 350, pp. 42-46, 2014.


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