CALCULATION AND ANALYSYS OF ELECTRON TRANSPORT COEFFICIENTS IN TRIES-N2 GAS MIXTURES

Phan Thị Tươi; Đào Văn Đã; Đỗ Anh Tuấn; Phạm Xuân Hiển

doi:10.34238/tnu-jst.6889

CALCULATION AND ANALYSYS OF ELECTRON TRANSPORT COEFFICIENTS IN TRIES-N2 GAS MIXTURES

About this article

Received: 07/11/22 Revised: 30/11/22 Published: 30/11/22

Authors

1. Phan Thi Tuoi, Hung Yen University of Technology and Education
2. Dao Van Da, Hung Yen University of Technology and Education
3. Do Anh Tuan , A Chau Industrial Technology Joint Stock Company, Ha Noi
4. Pham Xuan Hien, University of Transport and Communications

Abstract

The electron transport coefficients in gases or gas mixtures are important data for plasma modeling. The pure triethoxysilane (TRIES) and pure N₂ are widely used in various plasma processing such as doping plasma, plasma etching and plasma-enhanced chemical vapor deposition. In order to improve the quality of plasma processing, the TRIES-N₂ mixture was suggested. Therefore, the determination of the electron transport coefficients in TRIES-N₂ mixtures with different mixing ratio are necessary. In this study, the electron transport coefficients, which include the electron drift velocities, the density-normalized longitudinal diffusion coefficients and the Townsend first ionization coefficients in TRIES and its mixture with N₂, were firstly calculated and analyzed using a Boltzmann two-term calculation. This study was carried out in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (1 Td = 10⁻¹⁷ V cm²) based on the reliable electron collision cross section sets for TRIES and N₂ molecules. These results are necessary for plasma processing using the TRIES-N₂ mixtures.

Keywords

TRIES-N2 mixtures; Electron transport coefficient; Boltzmann equation; Plasma processing; Triethoxysilane

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DOI: https://doi.org/10.34238/tnu-jst.6889

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